TVB：价带顶部

在半导体物理学和材料科学领域，“Top of Valence Band”是一个常用术语，通常缩写为TVB，以方便书写和口头交流。该术语指代电子能带结构中的“价带顶部”，常用于描述材料的电子性质。值得注意的是，TVB这一缩写有时也会在音乐或社会语境中被借用，但主要仍属于科技专业词汇。

The bent bond states mainly appear near the top of valence band.
弯键态主要出现在价带顶附近。
Effective masses at the top of valence band and at the bottom of conduction band were deduced from band structure.
价带顶和导带底的有效质量从计算得到的能带结构中求出。
Substitutional Ag introduces some localized gap states, while the Fermi level is pinned near the top of valence band, and the impurity states can trap the hole to suppress the recombination of photo-generated carriers.
替位Ag会引入一些定域隙态，同时费米能级钉扎在价带顶，杂质态可以捕获空穴以抑制光生载流子的复合。
Theoretical calculations shows that these two kinds of nanotubes both have direct and wide band gap while bottom of conduction band and top of valence band, which are mainly composed of Zn-4s Zn-4p orbits and Zn-3d O-2p orbits respectively, are located in Γ point of Brillouin zone.
理论计算表明这两种纳米管都具有宽的直接带隙，导带底和价带顶都位于布里渊区Γ点处。
These weak bond levels have been shifted to some location near the top of valence band or near the bottom of conduction band due to ex'tra charges.
过剩电荷使弱键能级移至价带顶或导带底附近；

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