TSV:通过硅通过
“Through Silicon Via”通常缩写为TSV,以方便快捷地书写和使用。这一术语常见于集成电路与半导体制造等综合性领域,泛指在硅芯片内部实现垂直互联的微孔技术。它的中文直译是“硅通孔”或“通过硅穿孔”,是实现三维芯片堆叠及高性能封装的关键工艺之一。
Through Silicon Via具体释义
Through Silicon Via的英文发音
例句
- An Investigation of Reactive Ion Etching for Through Silicon Via(TSV) Packaging Technology
- 反应离子刻蚀在穿透硅通孔封装技术中的应用研究
- The methods of3D interconnection can be classified into the wire bonding, flip chip, through silicon via ( TSV ) and film wire technology, whose advantages and disadvantages are analyzed.
- 将实现3D互连的方法分为引线键合、倒装芯片、硅通孔、薄膜导线等,并对它们的优缺点进行了分析。
- TSV ( Through Silicon Via(TSV) ) is a new interconnected technology that used in high density 3-dimensional packaging.
- 硅通孔(ThroughSiliconVia,TSV)技术是一种应用于高密度三维封装中的新兴互连技术。
- Aiming at the through silicon via technologies, the significance of this research is presented. 2. The features of micro-EDM are analysed and the model of material removal by single pulse is established.
- 针对硅通孔互连技术,分析了现有硅微细加工方法存在的技术瓶颈,提出了本文的研究内容和意义;2.分析了低电阻率单晶硅微细电火花加工的机理,建立了单脉冲材料蚀除模型。
- It is also necessary to do thermo-mechnical modeling of thermal through silicon via ( TTSV ) and thin stack die ( including adhesive and interposer ) and the impact on active devices and interconnect.
- 有必要进行热硅通孔和薄的堆叠晶片(包括粘结层或者中介层)的热-力建模及其对有源器件和互连线影响的研究。
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