WL：润湿层

“润湿层”（Wetting Layer，常缩写为WL）是气象学及相关科研领域中一个常见术语。该缩写形式便于书写与交流，被广泛用于学术论文、专业报告和日常讨论中，用以指代大气中贴近地表、湿度较高的近地层结构。

The wetting layer may be substantially subsumed in the high content solder forming an intermetallic compound layer.
可将润湿层(WL)基本包含于高含锡量焊料中以形成金属间复合层。
Effect of Wetting Layer(WL) Transition and Pure Dephasing on Rabi Oscillation Decoherence in Semiconductor Quantum Dots
半导体量子点中浸润层跃迁与纯失相对Rabi振荡退相干的影响
The effects of the Ga wetting layer on the selection of ZnO polarity and the reduction of defect density in epitaxial thin films have been discussed in detail. Meanwhile, a Ga bilayer model has been proposed to explain the mechanism of Zn unipolarity growth with this method.
本文详细讨论了Ga浸润层在ZnO薄膜的极性选择以及缺陷密度的减少等方面所起的作用，并通过一个双层Ga原子模型分析了单一Zn极性生长的机理。
Experiments reveal that the Ga wetting layer suppresses completely the formation of rotation domains and inversion domains which are the main causes of the quality degradation of ZnO thin films.
实验发现，Ga薄层的引入完全抑制了导致ZnO薄膜质量下降的旋转畴和倒反畴的形成。
When brazing temperature exceeded 1020 ℃, chemical reaction layer and physical wetting layer appeared at both sides of filler metal.
钎焊温度超过1020℃，钎料两侧界面出现比较明显的化学反应层和物理润湿层(WL)。

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