TED:瞬态增强扩散
“瞬态增强扩散”(Transient Enhanced Diffusion,简称TED)是学术科学领域中,尤其是在电子材料和半导体技术中广泛使用的专业术语。该简称的引入,极大地简化了书写和交流过程,为研究人员在探讨扩散过程中的瞬态增强现象时提供了便利。
Transient Enhanced Diffusion具体释义
Transient Enhanced Diffusion的英文发音
例句
- In addition, the transient enhanced diffusion during the rapid annealing of boron implanted silicon has also been discussed.
- 本文还讨论了瞬态退火过程中的增强扩散效应。
- At the same irradiation conditions, it is found that the existence of a SiO 2 layer in the near surface of Si is even more effective in suppressing the transient enhanced diffusion of the doped B atoms.
- 在相同的辐照条件下,Si近表面区域中SiO2层的存在更有助于限制B原子的瞬间增强扩散。
- The results show that the transient enhanced diffusion of B atoms is effectively limited by the post-implantation of high energy ions at high dose.
- 结果表明,高剂量Si,F和O离子的附加辐照可以抑制热激活退火中B原子发生的瞬间增强扩散。
- Study of Transient Enhanced Dopant Diffusion in Silicon and Proposed Limiting Methods
- Si中掺杂原子的瞬间增强扩散现象及抑制方法
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