PDOS:状态的部分密度
“Partial Density Of States”通常缩写为PDOS,以方便书写和交流。该术语多见于材料科学、凝聚态物理学等交叉学科领域,用于描述电子结构分析中特定原子或轨道对总态密度的贡献。其中文译名为“态密度部分”或“分波态密度”,有时也直译为“状态的部分密度”。
Partial Density Of States具体释义
Partial Density Of States的英文发音
例句
- The band structure, density of states, partial density of states and distribution of charge are simulated and analyzed to understand the electronic and bonding properties of TiC bulk.
- 本文首先计算了TiC的体相性质。通过模拟其能带结构、态密度、偏态密度及电荷分布等参数来了解其电子结构和键合特性等方面的性质。
- The calculation of total energy, energy band structure, and total electronic density of states and partial density of states of ZnO were carried out, Ga-doping effects on electronic and structural properties of ZnO crystal.
- 计算了Ga掺杂情况下ZnO晶体的总体能量、能带结构、总体态密度、分波态密度。分析了Ga掺杂对ZnO晶体电子结构和光学吸收带边的影响。
- The self-consistent band structure, total and partial density of states for the stable compounds hcp-WC and MoC are calculated by the LMTO-ASA method based on Kohn-Sham's LDF theory.
- 本文基于局域密度泛函理论(LDF)和LMTO-ASA方法,计算了稳定的六角结构碳化钨和碳化钼的自洽能带结构,总态密度和分波态密度。
- The total density of states, partial density of states, band structure and valence electron charge density contours has been shown.
- 给出了其结构、态密度、电荷密度分布及能带结构等。
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