IVD:离子气相沉积

离子气相沉积(Ion Vapor Deposition,常缩写为IVD)是一种材料表面处理技术,广泛用于化学和材料科学领域。该术语为便于书写和学术交流,常采用其英文缩写形式,指在真空条件下利用离子化气相物质在基材表面沉积薄膜的过程,具有成膜均匀、附着力强等特点。

Ion Vapor Deposition具体释义

  • 英文缩写:IVD
  • 英语全称:Ion Vapor Deposition
  • 中文意思:离子气相沉积
  • 中文拼音:lí zǐ qì xiāng chén jī
  • 相关领域ivd 化学

Ion Vapor Deposition的英文发音

例句

  1. Strengthening effect and acting mechanics of RE elements were mainly studied in diffusing implantation, ion infiltration and vapor deposition.
  2. 扩散渗入中,稀土元素主要起到催渗和微合金化的作用;
  3. DLC films were deposited at 120 ℃ using ion beam implantation assisted vapor deposition of mineral oil.
  4. 采用碳离子束注入辅助蒸发矿物油的方法在120℃低温沉积了DLC薄膜;
  5. Phosphine ( PH3 ) is an important electronic specific gas which is mainly used in fields of N-type semiconductor doping, ion implement and chemical vapor deposition ( CVD ) etc.
  6. 磷化氢(PH3)是一种重要的电子特气,主要用于n型半导体的掺杂、离子注入和化学气相沉积(CVD)等。
  7. Progress in Preparation of Thin Film Electrodes for Lithium Ion Batteries by Physical Vapor Deposition
  8. 物理气相沉积制备锂离子电池正极薄膜研究进展
  9. The various preparation methods of a-C : H thin films, including plasma deposition, ion beam deposition, sputtering and chemical vapor deposition, were described in detail in this paper.
  10. 本文详细介绍了a-C∶H薄膜的各种制备方法,包括等离子体淀积法、离子束法、溅射法和化学汽相淀积法等,给出了某些典型的实验条件。