IVD:离子气相沉积
离子气相沉积(Ion Vapor Deposition,常缩写为IVD)是一种材料表面处理技术,广泛用于化学和材料科学领域。该术语为便于书写和学术交流,常采用其英文缩写形式,指在真空条件下利用离子化气相物质在基材表面沉积薄膜的过程,具有成膜均匀、附着力强等特点。
Ion Vapor Deposition具体释义
Ion Vapor Deposition的英文发音
例句
- Strengthening effect and acting mechanics of RE elements were mainly studied in diffusing implantation, ion infiltration and vapor deposition.
- 扩散渗入中,稀土元素主要起到催渗和微合金化的作用;
- DLC films were deposited at 120 ℃ using ion beam implantation assisted vapor deposition of mineral oil.
- 采用碳离子束注入辅助蒸发矿物油的方法在120℃低温沉积了DLC薄膜;
- Phosphine ( PH3 ) is an important electronic specific gas which is mainly used in fields of N-type semiconductor doping, ion implement and chemical vapor deposition ( CVD ) etc.
- 磷化氢(PH3)是一种重要的电子特气,主要用于n型半导体的掺杂、离子注入和化学气相沉积(CVD)等。
- Progress in Preparation of Thin Film Electrodes for Lithium Ion Batteries by Physical Vapor Deposition
- 物理气相沉积制备锂离子电池正极薄膜研究进展
- The various preparation methods of a-C : H thin films, including plasma deposition, ion beam deposition, sputtering and chemical vapor deposition, were described in detail in this paper.
- 本文详细介绍了a-C∶H薄膜的各种制备方法,包括等离子体淀积法、离子束法、溅射法和化学汽相淀积法等,给出了某些典型的实验条件。
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