HEMT：高电子迁移率晶体管
高电子迁移率晶体管（High Electron Mobility Transistors，简称HEMT）是一种性能优异的半导体器件，其名称常被缩写为HEMT，以便于在学术文献和技术文档中快捷书写与使用。该术语常见于综合性的电子工程与半导体技术领域，尚未被限定于特定子类。
High Electron Mobility Transistors具体释义
High Electron Mobility Transistors的英文发音
例句
- Considering the peculiarities of AlGaN / GaN high electron mobility transistors ( HEMTs ), a model of extracting parasitic and intrinsic parameters for HEMT's small signal equivalent circuit is presented.
- 本文在高电子迁移率晶体管(HEMT)（HEMT）小信号等效电路模型的基础上，考虑了AlGaN/GaNHEMT的结构特性，具体分析了寄生参数和本征参数的提取方法。
- This article also discusses the electrical properties of zinc blende structure InN thin films and presents the potential application of InN thin films for devices ( mainly for high electron mobility transistors ).
- 同时也涉及了部分立方闪锌矿结构InN的电学特性和InN在器件（主要是高电子迁移率晶体管(HEMT)器件）上的潜在应用。
- High electron mobility transistors ( High Electron MobilityTransistor ) as a field-effect transistor, have been widely used in communications, electronics and other fields, it has the characteristics of high-power, low-noise, high-frequency, high-speed.
- 而高电子迁移率晶体管(HEMT)（HighElectronMobilityTransistor）作为场效应晶体管中的一种，也开始广泛应用于通信、电子等领域，它具有大功率、低噪声、高频、高速等特点。
- The multiple valued logic ( MVL ) circuits, which composed by resonant tunneling diodes ( RTD ) and high electron mobility transistors ( HEMT ), can complete definite logic functions with less devices. So the MVL circuits are simplified.
- 由共振隧穿二极管（RTD）和高电子迁移率晶体管(HEMT)（HEMT）构成的多值逻辑（MVL）电路可以用最少的器件来完成一定的逻辑功能，达到大大简化电路的目的。
- It is a good candidate for the high quality photoelectronic and microelectronic devices, such as fiber optical communication lasers, photoelectronic detectors, high electron mobility transistors and electro-optic modulators.
- 它是制备性能优良的光电子与微电子器件，如光纤通讯激光器、光电探测器、高电子迁移率晶体管(HEMT)、电光调制器等的主要选择对象之一。
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