STI:浅沟槽绝缘
在微电子及集成电路制造等学术与工业领域,“浅沟槽绝缘”(Shallow Trench Isolation,常缩写为 STI)是一项关键工艺技术。该缩写的使用不仅便于书写和快速交流,也有助于相关文献和技术文档的简洁表达。STI技术主要用于器件间的电学隔离,是现代半导体工艺中不可或缺的组成部分。
Shallow Trench Isolation具体释义
Shallow Trench Isolation的英文发音
例句
- And then this thesis analyses the single element package, tip pressure and shallow trench isolation technology. Finally, the chip designed in this paper is summarized and the trend of this research is introduced.
- 并对单个元胞、尖端耐压和浅槽隔离技术进行了分析;最后,对整个论文做了一个总结,并提出了本设计以后工作的方向。
- Shallow Trench Isolation(STI) Process for Deep Sub - Micron Technologies
- 深亚微米隔离技术&浅沟槽隔离工艺
- The chemical mechanical planarization ( CMP ) in semiconductor manufacturing technology is today the formation of shallow trench isolation ( STI ) of the key technologies.
- 而化学机械平坦化(CMP)技术是当今半导体制造中形成浅沟道隔离(STI)的关键技术。
- Chemical mechanical planarization ( CMP ) technique is a key process enabling shallow trench isolation ( STI ) in semiconductor manufacture today, which is used in current integrated circuit manufacturing processes to achieve device isolation.
- 浅沟道隔离是目前大规模集成电路制造中用于器件隔离的主要方法,而化学机械平坦化(CMP)技术是当今半导体制造中形成浅沟道隔离(STI)的关键技术。
- For STI planarization, CMP-based polishing consider different density graphics uniformity, traditional shallow trench isolation planarization ( STI CMP ) process has been unable to meet the requirements.
- 对STI的平坦化,基于CMP对不同密度图形研磨均匀性的考虑,传统的浅沟道隔离平坦化(STICMP)工艺已经无法满足要求。
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