APCVD：大气压化学气相沉积
大气压化学气相沉积（APCVD）是一种在常压环境下通过化学反应在基体表面沉积固态薄膜的技术。该缩写形式广泛用于半导体制造、材料科学等电子相关领域的学术文献中，既能简化专业术语的书写，又能提高科技交流的效率。
Atmospheric Pressure Chemical Vapor Deposition具体释义
Atmospheric Pressure Chemical Vapor Deposition的英文发音
例句
- TiN films were deposited on glass substrates by atmospheric pressure chemical vapor deposition ( APCVD ) using titanium tetrachloride ( TiCl_4 ) and ammonia ( NH_3 ) as reactants, nitrogen ( N_2 ) as protective atmosphere and carrier gas in this paper.
- 本论文利用化学气相沉积法（APCVD），以TiCl4和NH3气体作为反应物，以惰性气体N2作为保护气体和载气，在玻璃基板上沉积TiN薄膜。
- The paper put forward an aim to deposit titanium films and TiO_2 / SnO_2 : F multiple films prepared by the method of dielectric barrier discharge atmospheric pressure chemical vapor deposition ( DBD-CVD ).
- 提出以介质阻挡放电化学气相沉积法（DBD-CVD）制备TiO2单层薄膜和TiO2/SnO2：F复合薄膜的实验目标。
- Structure and Hydrophilicity of Titanium Dioxide Film Prepared by Atmospheric Pressure Chemical Vapor Deposition(APCVD)
- AP-CVD法制备的二氧化钛薄膜结构及亲水性研究
- Growth and Properties of TiN Films on Glass by Atmospheric Pressure Chemical Vapor Deposition(APCVD)
- TiN镀膜玻璃的常压化学气相沉积法制备及其光电性能研究
- The atmospheric pressure chemical vapor deposition ( APCVD ) technique has a great application potential to be a method to prepared the economical tin oxide films for its simple equipment, inexpensive and suitable for mass production.
- 常压化学气相沉积法以其设备简单、成本低、易实现大面积镀膜等优点成为一种很有应用潜力的制备SnO2薄膜的方法，在镀膜玻璃的工业化生产中有广阔的应用前景。
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