IBD:离子束沉积
离子束沉积(Ion Beam Deposition,常缩写为IBD)是一种在电子及材料科学等领域广泛应用的薄膜制备技术。采用缩写IBD可以简化专业文献和日常交流中的书写与使用,尤其便于在学术论文和技术文档中高效表达。
Ion Beam Deposition具体释义
Ion Beam Deposition的英文发音
例句
- He studied physics at the Universities of Bremen and Konstanz, and completed his PhD thesis entitled " Diamond-like materials prepared via mass selected ion beam deposition " in1996.
- 博士论文主题为离子质量选择法制备类金刚石材料,离子束沉积(IBD)的类金刚石薄膜。
- The various preparation methods of a-C : H thin films, including plasma deposition, ion beam deposition, sputtering and chemical vapor deposition, were described in detail in this paper.
- 本文详细介绍了a-C∶H薄膜的各种制备方法,包括等离子体淀积法、离子束法、溅射法和化学汽相淀积法等,给出了某些典型的实验条件。
- The results as followed were shown : ( 1 ) There exist some particles and pits with a dimension of hundreds nm in the W-DLC films fabricated by ion beam deposition + magnetron sputtering.
- 结果表明:(1)利用离子束沉积(IBD)+磁控溅射技术制备的掺钨DLC膜表面存在尺寸为几百nm的颗粒及凹坑等缺陷。
- Early work on the fabrication of ceramic thin films was mainly based on vacuum deposition techniques such as ion beam deposition and sputtering. But vacuum techniques have restricted the deposition of device-quality films due to problems of poor stoichiometric control and complex sets of deposition parameters.
- 早期制备陶瓷薄膜主要采用真空镀膜技术如等离子溅射法,但真空技术由于化学计量比较难以控制并且制备参数复杂,影响了成膜质量。
- The ( 111 ) textured cubic silicon carbide ( 3C-SiC ) thin films are deposited on ( 111 ) Si substrates using the mass-selected ion beam deposition technique at various substrate temperatures.
- 在硅衬底上利用具有质量选择功能的低能离子束沉积(IBD)技术沉积碳离子制备出除碳、硅之外无其他杂质元素的纯净的立方SiC薄膜。
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