MTJ：磁隧道结
磁隧道结（Magnetic Tunnel Junction，简称MTJ）是一种在电子学与材料科学领域应用广泛的核心元器件。为方便书写和讨论，其英文名称通常被缩写为MTJ，这一术语在各类学术文献、技术文档以及工程实践中十分常见。它在自旋电子学器件、磁阻式随机存取存储器（MRAM）等前沿技术中发挥着关键作用。
Magnetic Tunnel Junction具体释义
Magnetic Tunnel Junction的英文发音
例句
- At each intersection, a " magnetic tunnel junction "( MTJ ) is created that serves as a switch-and thus as a repository for a single bit of memory.
- 这样，在每个交叉点就产生一个充当开关的磁隧道结(MTJ)（MTJ）
- Using free-electronic approximation method, the property of magnetoresistance of magnetic tunnel junction with nonmagnetic metal interlayer is researched, and the role of nonmagnetic metal interlayer in increasing the magnetoresistance is discussed in theory.
- 用自由电子近似方法对具有非磁金属中间层的磁性隧道结的磁电阻进行了研究，从理论上讨论了非磁金属中间层对磁电阻的影响。
- Research on Electromagnetic Character of Magnetic Tunnel Junction(MTJ)
- 磁性隧道结电磁特性的研究
- Compared with common multi-layer film of metal, the Magnetic Tunnel Junction(MTJ) structure formed of the ferromagnetic layer / insulating barrier / the ferromagnetic layer have the characteristic of the high hinder, low consumption, high output voltage, which has the extensive application prospect.
- 与通常的金属多层膜相比，铁磁层/绝缘层/铁磁层结构的磁性隧道结结构具有高内阻、低功耗、输出电压高的特点，其具有广泛的应用前景。
- The temperature dependence of the spin-polarized tunneling electrons in the magnetic tunnel junction
- 磁性隧道结自旋极化电子隧穿的温度特性
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