FN:福勒-诺德海姆
“Fowler Nordheim”通常缩写为FN,该缩写形式便于快速书写和日常使用,尤其在商业场景中,常出现在公司文件或企业相关语境中。其中文对应名称为“福勒-诺德海姆”,广泛用于涉及企业品牌、技术术语或合作伙伴关系的书面及口语交流中。
Fowler Nordheim具体释义
Fowler Nordheim的英文发音
例句
- Typical field emission patterns of tungsten carbide thin film is observed, and its I V behavior and Fowler Nordheim(FN) plot is measured.
- 对碳化钨薄膜的场发射IV特性及FowlerNordheim曲线进行测量和计算;
- A method is proposed for measuring the effective electron mass in the gate oxide in a thin MOS structure by using the extrema of Fowler Nordheim(FN) tunneling current oscillations.
- 给出了一种利用FN振荡电流的极值,测量电子在薄栅MOS结构的栅氧化层中的平均有效质量方法。
- The field emission current density distribution over the tip surface was established using Fowler-Nordheim function, and the emission current over the single tip established by integrating the current density all over the single tip surface was 7 μ A.
- 由FowlerNordheim函数可得到尖锥表面的场致发射电流密度分布,对整个尖锥表面进行积分后得到了单个尖锥的场致发射电流约为7μA。
- Based on the Fowler-Nordheim tunneling theory, a model for carriers transport and recombine in organic bilayer light emitting diodes ( LEDs ) is presented.
- 以在高场作用下载流子对三角势垒的FowlerNordheim隧穿理论为基础,建立了双层有机电致发光器件载流子的输运与复合发光模型。
- The new memory cell is programmed by band to band tunneling induced hot electron ( BBHE ) injection method at the drain, and erased by Fowler Nordheim(FN) tunneling through the source region.
- 该结构采用带带隧穿热电子注入(BBHE)进行写编程,采用源极FowlerNordheim隧穿机制进行擦除。
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