VBM:价带最大值

“价带最大值”(Valence Band Maximum,简称VBM)是半导体物理学与材料科学中的关键概念,用于描述价带顶部的最高能级位置,直接影响材料的电学特性。在学术文献和技术交流中,常使用缩写“VBM”以方便快捷地书写和引用。这一术语广泛应用于电子能带结构分析、光电器件研发等相关领域。

Valence Band Maximum具体释义

  • 英文缩写:VBM
  • 英语全称:Valence Band Maximum
  • 中文意思:价带最大值
  • 中文拼音:jià dài zuì dà zhí
  • 相关领域vbm 电子

Valence Band Maximum的英文发音

例句

  1. The valence band maximum is a flat band; whereas the conduction band minimum is a parabolic band.
  2. 能带中价带顶是一条平坦的能带,而导带底为具有抛物线形状的能带。
  3. As one of the most important parameters to characterize the value of semiconductor application, band gap is the energy difference between the valence band maximum and conduction band minimum.
  4. 半导体的带隙是表征其应用价值的重要参数之一,它是能带结构中价带顶部到导带底部的能量差值。
  5. It is found that the intrinsic occupied surface states related to P atom dangling bonds are located at 0.6 eV below the valence band maximum, while the defect induced empty surface states are located at 1.1 eV above the valence band maximum (Γ point ).
  6. 发现与P原子悬挂键有关的本征满表面态在Г点位于价带顶下0.6eV处,而缺陷引入的空表面态位于价带顶上1.1eV处(Г点)。