PCVD:等离子体化学气相沉积
等离子体化学气相沉积(Plasma Chemical Vapor Deposition,简称PCVD)是一种广泛应用于电子与材料科学领域的关键技术。该缩写形式PCVD便于在学术文献及技术交流中快速书写和高效使用。
Plasma Chemical Vapor Deposition具体释义
Plasma Chemical Vapor Deposition的英文发音
例句
- Under the catalytic effect of nickel particles, spring-like carbon filaments were synthesized through microwave plasma chemical vapor deposition.
- 以镍为催化剂,利用微波等离子体化学气相沉积(PCVD)法制备了弹簧状碳纤维。
- Atmospheric-pressure Plasma Chemical Vapor Deposition(PCVD) for Polycrystalline Silicon Preparation from SiCl_4 and OES Diagnosis
- 由SiCl4制备多晶硅的大气压等离子体化学气相沉积(PCVD)及发射光谱诊断
- The relation between characteristics of hot cathode glow discharge and diamond film deposition techniques in hot cathode glow discharge plasma chemical vapor deposition process was discussed.
- 采用傅立叶红外吸收谱和紫外-可见透射谱研究了螺旋波等离子体增强化学气相沉积法制备的氢化非晶氮化硅薄膜的原子间键合结构和光学特性。
- Ultrafine TiO_2 particles were synthesized by TiCl_4 and O_2 in radio frequency plasma chemical vapor deposition reactor.
- 利用TiCl_4+O_2体系,在高频等离子体化学气相淀积反应器中合成了纯度高、粒度细的TiO_2粒子。
- Carbon nanotube films were synthesized on Ni substrate by microwave plasma chemical vapor deposition at low temperature.
- 以镍片为基板材料,利用微波等离子体化学气相沉积(PCVD)法在低温条件下合成了纳米碳管膜。
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