CZ：直拉法
Czochralski Process，常缩写为CZ，是一种广泛应用于半导体和电子行业的晶体生长技术。这种缩写形式因其书写简便、便于交流而在学术与工程领域被普遍采纳。该方法的中文译名为“直拉法”，是制备单晶硅等关键材料的重要工艺之一。
Czochralski Process的英文发音
例句
- Drawing single Ge crystal with large diameter and big diameter ratio of crystal to crucible by means of Czochralski process
- 切克拉斯基法拉制大晶埚径比大直径锗单晶
- Linear Law Governing the Flow of Silicon Melt in the Surface Layer during Czochralski Process(CZ) Control of Oxygen in Ge Doped Si Single Crystal by Czochralski Technique
- 直拉法(CZ)硅表面层熔体流动所遵循的线性规律直拉法(CZ)生长掺锗硅单晶时氧的控制
- Modeling of Czochralski Single Crystal Growth Process Using Neural Network
- 基于神经网络的提拉法钛单晶生长过程建模
- A feedforward multilayer perceptron is used to develop a single-step predictor, modeling the thermal response of the Czochralski single crystal growth process of ilmenite. The training of the neural network is performed using adaptive back-propagation, an accelerated learning algorithm.
- 建立前馈神经网络预测器，建模提拉法钛晶体生长过程非线性动态特性，用自适应BP算法训练神经网络，以加快网络的学习和收敛。
- The effects of the transition metals copper and nickel on oxygen precipitation in Czochralski silicon under a rapid thermal process are investigated.
- 研究了快速热处理工艺下直拉单晶硅中过渡族金属铜、镍对内吸杂工艺中氧沉淀形成规律的影响。
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