HCI：热载体注入

热载流子注入（Hot Carrier Injection，常缩写为HCI）是半导体物理学和微电子领域中的一个重要概念，主要用于描述高能载流子（电子或空穴）在强电场作用下注入到绝缘层或界面态中的现象。这一现象对器件的可靠性和寿命有显著影响，因此在集成电路设计与材料研究领域被广泛关注。

Step channel direct injection ( SCDI ) flash memory device which had been developed changes the hot carrier injection method by making a shallow step in the middle of channel. Therefore high speed for programming, high efficiency for injection, and lower working voltage are obtained.
研制成一种台阶沟道直接注入（SCDI）器件，通过在沟道的中间制作一个浅的台阶来改变热载流子的注入方式，从而获得了高的编程速度和注入效率，降低了工作电压。
Based on the formation theories of interface traps and oxide traps in Si-SiO2, further more the influences of hot carrier injection on 1 / f γ noise are discussed thoroughly.
基于Si/SiO2界面态和氧化层陷阱形成理论，深入讨论了该类器件热载流子注入对1/fγ的影响，提出了用噪声参数S？
A hot carrier injection degradation model for a DSM ( deep submicron ) pMOS device is studied, which is based on the physical model of a degradation gate current.
研究了一种建立在退化栅电流物理解析模型基础上的深亚微米pMOS器件HCI（hotcarrierinjection）退化模型。
MOSFET ′ s Damage Induced by Hot Carrier Injection(HCI) and Its Annealing
MOSFET的热载流子损伤及其退火
Effects of Channel Hot - Carrier Injection s in NMOSFET's at 77K
77KNMOSFET沟道热载流子注入效应

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