LPCVD:低压化学气相沉积
低压化学气相沉积(Low Pressure Chemical Vapor Deposition),常缩写为LPCVD,是一种在低压环境下通过化学反应在基片表面沉积薄膜的工艺。该技术广泛应用于微电子、半导体制造和材料科学等领域,具有成膜均匀、致密性好等优点,是集成电路和功能器件制备中的关键工艺之一。使用缩写LPCVD便于学术交流与文献书写,提高专业文档的简洁性和可读性。
Low Pressure Chemical Vapor Deposition具体释义
Low Pressure Chemical Vapor Deposition的英文发音
例句
- Synthesis of Carbon Nanotubes by Low Pressure Chemical Vapor Deposition(LPCVD) and Their Applications
- 碳纳米管的低压化学气相沉积(LPCVD)法制备及其应用研究
- Nano-sized silicon films with large area were prepared by normal Low Pressure Chemical Vapor Deposition(LPCVD) method.
- 利用普通低压化学气相沉积(LPCVD)技术在玻璃衬底上制备了大面积的纳米硅薄膜。
- In this paper CNT film was deposited on metal substrate by low temperature and low pressure chemical vapor deposition ( CVD ). Field emission cathode was made by thin-film and thick-film process.
- 本文采用低温低压化学气相沉积(LPCVD)(CVD)方法在金属衬底上直接生长碳纳米管薄膜,并分别运用薄膜和厚膜工艺,制作场发射阴极。
- Acetylene Flow Rate Effect on Morphology and Structure of Carbon Nanotube Thick Films by Low Pressure Chemical Vapor Deposition(LPCVD)
- 碳源流量对碳纳米管厚膜形貌和结构的影响
- Growth Rate and Surface Morphology of Silicon Nitride Thin Films by Low Pressure Chemical Vapor Deposition(LPCVD)
- 低压CVD氮化硅薄膜的沉积速率和表面形貌
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